• Kris Reyes
  • March 14, 2 PM
  • 2866 East Hall

Gallium Arsenide (GaAs) quantum dots are formed by molecular beam epitaxy, where a liquid Ga droplet is allowed to coalesce on a GaAs substrate before an As overpressure is introduced in an attempt to crystallize the droplet. Depending on growth conditions such as temperature and As deposition rate, several different types of morphology result. In this talk, we discuss the formation of GaAs quantum dots with liquid Ga cores that are observed in experiments. We provide a model for crystallization in which such liquid cores are the result of a Mullins-Sekerka instability, which induces fast growth of a GaAs shell. We also present Kinetic Monte Carlo simulations of liquid core formation.

 

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